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Litaba tsa Indasteri: PVA TePla le Fraunhofer IISB ba thehile Joint Labor bakeng sa substrates tsa aluminium nitride

Litaba tsa Indasteri: PVA TePla le Fraunhofer IISB ba thehile Joint Labor bakeng sa substrates tsa aluminium nitride

Litaba tsa Indasteri Keysight le WIN ba sebelisana 'moho ho fokotsa kotsi ea moralo bakeng sa likarolo tsa RF tse sebetsang khafetsa

Fraunhofer IISB (Setsi sa Theknoloji e Kopaneng ea Litsamaiso le Lisebelisoa) e thehiloeng Erlangen le moetsi oa sistimi ea plasma ea maqhubu a microwave le radio PVA TePla AG e thehiloeng Wettenberg ba kopanya boiphihlelo ba bona ho Joint Labor bakeng sa tlhahiso ea likristale tsa aluminium nitride (AlN).

Jwalo ka ha e le ya pele Yuropa, tshebedisano ena e thusa tlhahiso e nyane e tshehetswang ke diindasteri ya di-substrate tsa AlN tse nang le bophara ba di-inchi tse 2 bakeng sa merero ya R&D. Sena se ntlafatsa haholo ho fumaneha ha di-substrate tsa AlN Europe, e leng se potlakisang ntshetsopele ya disebediswa le ditsamaiso tse thehilweng ho AlN le phetoho ya tsona ho ya ditshebedisong tsa diindasteri.

Aluminium nitride ke e 'ngoe ea thepa e tšepisang haholo bakeng sa moloko o latelang oa lisebelisoa tsa elektroniki tse sebetsang hantle. Joaloka semiconductor ea ultrawide-bandgap (UWBG), AlN e bula menyetla e mecha ho photonics, lisebelisoa tsa elektroniki tsa motlakase, lisebelisoa tsa elektroniki tse sebetsang khafetsa, le lisebelisoa tsa elektroniki tse sebetsang tlas'a maemo a feteletseng. Ho fihlela joale, khaello ea likarolo tsa AlN tsa boleng bo holimo, tsa sebaka se seholo le tse theko e tlaase e ntse e sitisa nts'etsopele ea litsamaiso tsa elektroniki tse thehiloeng ho AlN.

“Ka Joint Lab, re rala motheo ho netefatsa phepelo e tšepahalang ea li-substrate tsa AlN tse tsoang Europe, ka hona re bula menyetla e mecha bakeng sa moloko o latelang oa lisebelisoa tsa AlN tse sebetsang hantle,” ho bolela Ngaka Sven Besendörfer, moetapele oa sehlopha sa lisebelisoa tsa nitride le ea ikarabellang bakeng sa nts'etsopele ea lisebelisoa tsa AlN ho Fraunhofer IISB. “Mmoho le PVA TePla, re kenya letsoho boiphihlelong ba rona kholong ea kristale ea indasteri, ka hona re theha litlhoko tsa pele tsa phetisetso lits'ebetsong tsa konkreite.”

Theknoloji ea lisebelisoa e pakiloeng e fihlela tsebo ea ts'ebetso ea botho

Laboratoring e kopaneng, Fraunhofer IISB e sebedisa theknoloji ya yona ya tshebetso ya PVT (physical vapor transport) ho hlahisa dikristale tse kgolo tsa AlN tse 2-inch. Mokgweng ona, phofo ya AlN e tjheswa ka mouoane ka hara sebopi mochesong o ka hodimo ho 2000°C mme e bewa hodima kristale ya peo. PVA TePla e fana ka ditsamaiso tsa PVT bakeng sa morero ona, tse seng di ntse di sebediswa lefatsheng ka bophara bakeng sa dikristale tsa silicon carbide (SiC) tse bophara ba 8-inch mme jwale di se di lokisitswe ka ho kgetheha bakeng sa kgolo ya dikristale tsa AlN tse 2-inch.

Ka lebaka la boiphihlelo ba ts'ebetso bo fanoeng ke Fraunhofer IISB, sehlopha sa PVA TePla se ile sa khona ho hlahisa likristale tsa AlN tsa boleng bo tšoanang ka potlako litsing tsa sona. Joint Lab e shebane le tlhahiso e tsitsitseng ea likristale tsa AlN tsa lisenthimithara tse 2. Tlhahiso joale e ntse e eketseha butle-butle ho ntlafatsa botsitso ba ts'ebetso, ho ikatisa hape, chai le meaho ea litšenyehelo ka mokhoa o hlophisehileng.

“Ka aluminium nitride, re ntse re bopa moloko o latelang wa theknoloji o latelang SiC,” ho bolela Ngaka Jan Pfeiffer, motlatsi wa mopresidente wa R&D ho PVA TePla. “Ka Joint Lab, re ka kopanya ka ho toba boiphihlelo ba rona ba disebediswa le tsebo ya tshebetso ya Fraunhofer IISB, e leng se re nolofalletsang ho fana ka ditharollo tse shebaneng le mmaraka ho bareki ba rona ba lefatshe ka bophara mohatong wa pele,” o eketsa. “Sepheo sa rona se arolelanwang ke ho kgothaletsa ntshetsopele ya mmaraka lefapheng la AlN ka di-substrate tse loketseng le ho tshehetsa dikhamphani tse batlang ho kena lefapheng lena jwalo ka balekane ba theknoloji le disebediswa tse nepahetseng le boiphihlelo bo tsamaellanang le tshebetso.”

Ho matlafatsa boipuso ba theknoloji ea Europe ka ho atolosa indasteri

Likristale tsa AlN tse hlahisoang ho Joint Lab li ntse li sebetsoa hape ho Fraunhofer IISB ho ba li-substrate tsa AlN tse itokiselitseng epi 'me, ka feme ea lipatlisiso le nts'etsopele ea lihlahisoa e thehiloeng Erlangen LZE GmbH, e fetisetsoa ka ho khetheha lits'ebetsong tsa nts'etsopele ea indasteri le ho holisa. "Bakeng sa boipuso ba semiconductor ba Europe, ho bohlokoa hore lisebelisoa tse ncha tsa bohlokoa li se ke tsa ntlafatsoa feela empa hape li fetisetsoe ka potlako lits'ebetsong tsa indasteri le tlhahiso ea boleng bo ka atolosoang," ho bolela motsamaisi ea ka sehloohong oa LZE Dr Christian Forster. "Ka 'maraka oa eona oa mahlale a morao-rao, LZE GmbH e fa lik'hamphani le litsi tsa lipatlisiso phihlello e ikhethang le e bulehileng lefatšeng ka bophara ho li-substrate tsa AlN. Ka tsela ena, re thusa ho netefatsa hore lits'ebetso tse tšepisang tsa limmaraka tsa indasteri tse nang le bongata bo phahameng li tlisoa 'marakeng kapele."


Nako ea poso: Phupu-20-2026